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MTP36N06V
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 μ Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
60
?
?
?
?
?
61
?
?
?
?
?
10
100
100
Vdc
mV/ ° C
μ Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 250 μ Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (V GS = 10 Vdc, I D = 16 Adc)
Drain ? to ? Source On ? Voltage
(V GS = 10 Vdc, I D = 32 Adc)
(V GS = 10 Vdc, I D = 16 Adc, T J = 150 ° C)
Forward Transconductance (V DS = 7.6 Vdc, I D = 16 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
2.0
?
?
?
?
5.0
2.6
6.0
0.034
1.25
?
7.83
4.0
?
0.04
1.54
1.47
?
Vdc
mV/ ° C
Ohm
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
1220
337
74.8
1700
470
150
pF
SWITCHING CHARACTERISTICS (Note 2)
Turn ? On Delay Time
t d(on)
?
14
30
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 32 Adc,
V GS = 10 Vdc,
R G = 9.1 Ω )
t r
t d(off)
t f
?
?
?
138
54
91
270
100
180
Gate Charge
(See Figure 8)
(V DS = 48 Vdc, I D = 32 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
?
?
?
39
7.0
17
50
?
?
nC
Q 3
?
13
?
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored
Charge
(I S = 32 Adc, V GS = 0 Vdc)
(I S = 32 Adc, V GS = 0 Vdc,
T J = 150 ° C)
(I S = 32 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ μ s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
1.03
0.94
92
64
28
0.332
2.0
?
?
?
?
?
Vdc
ns
μ C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25 ″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L D
L S
?
?
3.5
4.5
7.5
?
?
nH
nH
1. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
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